| PART |
Description |
Maker |
| RD100HHF1 |
MOS FET type transistor specifically designed for HF High power amplifiers applications.
|
Mitsubishi Electric Semiconductor
|
| BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFQ193 Q62702-F1312 |
From old datasheet system
NPN SILICON RF TRANSISTOR (FOR LOW NOISE, HIGH-GAIN AMPLIFIERS UP TO 2GHZ FOR LINEAR BROADBAND AMPLIFIERS)
|
SIEMENS[Siemens Semiconductor Group]
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFR93AW Q62702-F1489 BFR93AWQ62702F1489 |
TRANSISTOR R.F SOT323 晶体管射频的SOT323
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC1729 SC1729 |
NPN EPITAXIAL PLANAR TYPE(RF power amplifiers on VHF band mobile radio)
From old datasheet system
NPN EPITAXAIL PLANAR TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BFP280 Q62702-F1378 |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管（对于低噪音，在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HTT1115E |
High Frequency Amplifiers(Twin Type)
|
Hitachi Semiconductor
|
| BFQ70 Q62702-F774 A0532 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) NPN硅射频晶体管（对于低噪音的集电极电流IF和电信系统的天线和宽带放大器2mA0mA
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BFR92P Q62702-F1050 BFR92PQ62702-F1050 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管（对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关）
TRANSISTOR UHF BIPOLAR BREITBAND
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
